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1N6263WS
SILICON SCHOTTKY BARRIER DIODE
for general purpose applications
PINNING PIN 1 2
1
DESCRIPTION Cathode Anode
2
S2 Top View Marking Code: "S2" Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Max. Single Cycle Surge Forward Current (10 s Square wave) Power Dissipation Junction Temperature Storage Temperature Range
1)
Symbol VRRM IFSM Ptot Tj TS
Value 40 2 400
1)
Unit V A mW
O
200 - 55 to + 200
C C
O
Valid provided the leads direct at the case are kept at ambient temperature.
Characteristics at Ta = 25 OC Parameter
Reverse Breakdown Voltage at IR = 10 A Forward Voltage at IF = 1 mA at IF = 15 mA Leakage Current at VR = 30 V Junction Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 5 mA , Recover to 0.1 IR
Symbol V(BR)R VF IR Ctot trr
Min. 40 -
Max. 0.39 0.9 200 2.2 1
Unit V V nA pF ns
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/09/2006
1N6263WS
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/09/2006
1N6263WS
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-323
A c
HE D A
E
bp
UNIT mm
A 1.10 0.80
bp 0.40 0.25
C 0.15 0.00
D 1.80 1.60
E 1.35 1.15
HE 2.80 2.30
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 01/09/2006

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